Proceedings Paper
The preparation of AZO films with RF sputtering| Format | Member Price | Non-Member Price |
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Paper Abstract
ZnO:Al is a kind of N type semiconductor material with low resistance and high transmittance in the visible region.
Using ZnO mixed with Al2O3 (2 wt %) as target, ZAO thin films were deposited on glass substrate by RF magnetron
sputtering. Orthogonal experiments were used to analyze the effects of main factors (oxygen flux, argon pressure,
substrate temperature, RF power) on the properties (transmittance, resistance) of the film. The results showed that the
optimal parameters in the room temperature are: the partial pressure of argon without oxygen is 0.1 Pa, RF power is
400w. After vacuum annealing at 220°C, the deposited film exhibits visible transmittance of above 82% and minimum
sheet resistance in 3.36 × 10-3 Ω • cm.
Paper Details
Date Published: 12 March 2008
PDF: 6 pages
Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241O (12 March 2008); doi: 10.1117/12.791173
Published in SPIE Proceedings Vol. 6624:
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing
Liwei Zhou, Editor(s)
PDF: 6 pages
Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241O (12 March 2008); doi: 10.1117/12.791173
Show Author Affiliations
Zhinong Yu, Beijing Institute of Technology (China)
Jin Xu, Beijing Institute of Technology (China)
We Xue, Beijing Institute of Technology (China)
Jin Xu, Beijing Institute of Technology (China)
We Xue, Beijing Institute of Technology (China)
Published in SPIE Proceedings Vol. 6624:
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing
Liwei Zhou, Editor(s)
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