
Proceedings Paper
Optical properties of porous anodic alumina films implanted with ZnO nanoparticlesFormat | Member Price | Non-Member Price |
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Paper Abstract
Porous anodic alumina (PAA) films with highly ordered pore arrays were prepared by a two step anodization process in
0.3M oxalic acid solution at 0°C. ZnO nanoparticles were loaded into the nanopores of PAA films by soaking the PAA
films in an aqueous solution of zinc acetate and then annealing them at 500°C. The PAA films and ZnO/PAA composites
were characterized by scanning electron microscope, X-ray diffraction, ultraviolet-visible spectrophotometer and
fluorescent spectrometer. The highly ordered PAA films are amorphous, the PAA films have a high optical
transmissivity in visible range and a wide blue photoluminescence band in the wavelength range of 350~550nm. The
photoluminescence intensity and peak position depend strongly on the excitation wavelength. ZnO nanoparticles loaded
into PAA films display a pure wurtzite ZnO phase, the average diameter of ZnO particles is 10.8nm. The transmissivity
of PAA films declines after ZnO is loaded in. The photoluminescence of ZnO/PAA films exhibits intense and broad
emission spectra in the wavelength range of 350-600nm. There is only one strong photoluminescence peak at 430nm
when excited at 340nm wavelength, the photoluminescence peak divides into two peaks of 410nm and 460nm while
excited at 380nm wavelength. The oxygen vacancies, F+ centres, are responsible for the photoluminescence of ZnO
nanoparticles loaded into PAA films.
Paper Details
Date Published: 12 March 2008
PDF: 11 pages
Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241L (12 March 2008); doi: 10.1117/12.791168
Published in SPIE Proceedings Vol. 6624:
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing
Liwei Zhou, Editor(s)
PDF: 11 pages
Proc. SPIE 6624, International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing, 66241L (12 March 2008); doi: 10.1117/12.791168
Show Author Affiliations
Jinliang Yan, Ludong Univ. (China)
Xueqing Sun, Ludong Univ. (China)
Xueqing Sun, Ludong Univ. (China)
Youliang Zhu, Ludong Univ. (China)
Yinnv Zhao, Ludong Univ. (China)
Yinnv Zhao, Ludong Univ. (China)
Published in SPIE Proceedings Vol. 6624:
International Symposium on Photoelectronic Detection and Imaging 2007: Optoelectronic System Design, Manufacturing, and Testing
Liwei Zhou, Editor(s)
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