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Proceedings Paper

Wavelength tunable distributed Bragg reflector laser integrated with electro-absorption modulator by a combined method of selective area growth and quantum well intermixing
Author(s): Ling-Juan Zhao; Jing Zhang; Lu Wang; Yuan-Bing Cheng; Jiao-Qing Pan; Hong-Bo Liu; Hon-Liang Zhu; Fan Zhou; Jing Bian; Bao-Jun Wang; Ning-Hua Zhu; Wei Wang
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Paper Abstract

Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10-10 after 44.4 km standard fiber transmission.

Paper Details

Date Published: 14 January 2008
PDF: 7 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240N (14 January 2008); doi: 10.1117/12.784832
Show Author Affiliations
Ling-Juan Zhao, Institute of Semiconductors (China)
Jing Zhang, Institute of Semiconductors (China)
Lu Wang, Institute of Semiconductors (China)
Yuan-Bing Cheng, Institute of Semiconductors (China)
Jiao-Qing Pan, Institute of Semiconductors (China)
Hong-Bo Liu, Institute of Semiconductors (China)
Hon-Liang Zhu, Institute of Semiconductors (China)
Fan Zhou, Institute of Semiconductors (China)
Jing Bian, Institute of Semiconductors (China)
Bao-Jun Wang, Institute of Semiconductors (China)
Ning-Hua Zhu, Institute of Semiconductors (China)
Wei Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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