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Proceedings Paper

Nonlinear excitations of semiconductor quantum wells with intense terahertz fields
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Paper Abstract

The optical response of semiconductor quantum wells is investigated theoretically to explain nonlinear transients generated via intense terahertz (THz) fields. A microscopic description of THz-induced interaction processes is developed while several numerical examples are presented to illustrate properties in a typical THz-pump and optical-probe configuration. The results identify signatures of the ac-Stark effect, ponderomotive contributions, and extreme-nonlinear dynamics.

Paper Details

Date Published: 22 February 2008
PDF: 10 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890D (22 February 2008); doi: 10.1117/12.784330
Show Author Affiliations
J. T Steiner, Philipps-Univ. Marburg (Germany)
M. Kira, Philipps-Univ. Marburg (Germany)
S. W. Koch, Philipps-Univ. Marburg (Germany)

Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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