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Proceedings Paper

Traveling wave modeling of semiconductor ring lasers
Author(s): Mindaugas Radziunas
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Paper Abstract

We use the traveling wave model for simulating and analyzing nonlinear dynamics of complex semiconductor ring laser devices. This modeling allows to consider temporal-spatial distributions of the counter-propagating slowly varying optical fields and the carriers, what can be important when studying non-homogeneous ring cavities, propagation of short pulses or fast switching. By performing numerical integration of the model equations we observe several dynamic regimes as well as transitions between them. The computation of ring cavity modes explains some peculiarities of these regimes.

Paper Details

Date Published: 8 May 2008
PDF: 9 pages
Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971B (8 May 2008); doi: 10.1117/12.781354
Show Author Affiliations
Mindaugas Radziunas, Weierstraß-Institut für Angewandte Analysis und Stochastik (Germany)

Published in SPIE Proceedings Vol. 6997:
Semiconductor Lasers and Laser Dynamics III
Krassimir P. Panajotov; Marc Sciamanna; Angel A. Valle; Rainer Michalzik, Editor(s)

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