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Proceedings Paper

Carrier-depletion-based optical modulator integrated in a lateral structure in a SOI waveguide
Author(s): Delphine Marris-Morini; Laurent Vivien; Jean Marc Fédéli; Eric Cassan; Gilles Rasigade; Xavier Le Roux; Philippe Lyan; Suzanne Laval
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Paper Abstract

A high speed and low loss silicon optical modulator based on carrier depletion has been made. It is based on carrier depletion and consists of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This device has advantages such as a low capacitance and low optical insertion loss. Experimental results are reported. Using a Mach-Zehnder interferometer with 4 mm-long phase shifter, contrast ratio of 14 dB has been obtained with insertion loss of 5 dB. A 3 dB-bandwidth of 10 GHz has been measured at λ = 1.55μm. Driving electrical power is evaluated. For a 5 mm-long active region, driving power is 100 mW at a frequency of 10 GHz. A large contribution of the dissipated power comes from the 50 Ω load at the end of the device. By integrating the modulator and its driver on CMOS chip, the load value could be varied and driving power could be reduced to a few tens of mW.

Paper Details

Date Published: 1 May 2008
PDF: 6 pages
Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 699615 (1 May 2008); doi: 10.1117/12.780999
Show Author Affiliations
Delphine Marris-Morini, Univ. Paris Sud, CNRS (France)
Laurent Vivien, Univ. Paris Sud, CNRS (France)
Jean Marc Fédéli, Minatec (France)
Eric Cassan, Univ. Paris Sud, CNRS (France)
Gilles Rasigade, Univ. Paris Sud, CNRS (France)
Xavier Le Roux, Univ. Paris Sud, CNRS (France)
Philippe Lyan, Minatec (France)
Suzanne Laval, Univ. Paris Sud, CNRS (France)

Published in SPIE Proceedings Vol. 6996:
Silicon Photonics and Photonic Integrated Circuits
Giancarlo C. Righini; Seppo K. Honkanen; Lorenzo Pavesi; Laurent Vivien, Editor(s)

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