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Proceedings Paper

Advanced HgCdTe technologies and dual-band developments
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Paper Abstract

The Molecular Beam Epitaxy (MBE) approach was under investigation for several years to prepare both the very large array fabrication and the 3rd generation developments. This large step in Infrared (IR) detector mass production is also necessary for producing third generation of IR detectors such as bicolor and dual band FPAs which use more complex multi hetero-junctions architectures. These new advanced HgCdTe technologies necessary for third generation developments have been validated and their producibility have been improved. As far as dual band IR detectors are concerned, the technologies are developed and a full TV format (24μm pixel pitch) is currently under development with a first application in bicolor within medium waveband. Future improvements including avalanche photodiodes (APD), will lead to more compact systems as well as a low cost approach.

Paper Details

Date Published: 18 April 2008
PDF: 14 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69402P (18 April 2008); doi: 10.1117/12.779902
Show Author Affiliations
Philippe Tribolet, Sofradir (France)
Gérard Destefanis, CEA Leti-MINATEC (France)
Philippe Ballet, CEA Leti-MINATEC (France)
Jacques Baylet, CEA Leti-MINATEC (France)
Olivier Gravrand, CEA Leti-MINATEC (France)
Johan Rothman, CEA Leti-MINATEC (France)

Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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