The temporal relaxation of optically excited electrons at the In-rich reconstructed InP(100) surface was studied using time-resolved two-photon-photoemission spectroscopy (TR-2PPE). High-energy carriers were generated at laser pump energies chosen to populate hot electron bulk states or the well known C₂ surface state via resonant direct optical excitation. The different relaxation pathways arising from these population schemes involve Γ-L-Γ intervalley scattering and the transient occupation of an additional surface state, C₁. The dynamics of these processes were recorded with a novel experimental setup using two ultra-low power 150 KHz repetition rate sub-20 fs NOPAs enabling two-colour pump-probe experiments in the linear regime. These experiments provide useful information in understanding the dynamics of devices on the basis of this semiconductor medium such as solar cells and high-speed switching circuits.

Date Published: 14 February 2008
PDF: 10 pages
Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 68921M (14 February 2008); doi: 10.1117/12.779241

Published in SPIE Proceedings Vol. 6892:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)