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Proceedings Paper

Electron relaxation dynamics at the In-rich (100) surface of InP
Author(s): Jodi Szarko; Liana Socaciu-Siebert; Antje Neubauer; Thomas Hannappel; Rainer Eichberger
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Paper Abstract

The temporal relaxation of optically excited electrons at the In-rich reconstructed InP(100) surface was studied using time-resolved two-photon-photoemission spectroscopy (TR-2PPE). High-energy carriers were generated at laser pump energies chosen to populate hot electron bulk states or the well known C2 surface state via resonant direct optical excitation. The different relaxation pathways arising from these population schemes involve Γ-L-Γ intervalley scattering and the transient occupation of an additional surface state, C1. The dynamics of these processes were recorded with a novel experimental setup using two ultra-low power 150 KHz repetition rate sub-20 fs NOPAs enabling two-colour pump-probe experiments in the linear regime. These experiments provide useful information in understanding the dynamics of devices on the basis of this semiconductor medium such as solar cells and high-speed switching circuits.

Paper Details

Date Published: 14 February 2008
PDF: 10 pages
Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 68921M (14 February 2008); doi: 10.1117/12.779241
Show Author Affiliations
Jodi Szarko, Hahn-Meitner-Institut Berlin (Germany)
Liana Socaciu-Siebert, Hahn-Meitner-Institut Berlin (Germany)
Antje Neubauer, Hahn-Meitner-Institut Berlin (Germany)
Thomas Hannappel, Hahn-Meitner-Institut Berlin (Germany)
Rainer Eichberger, Hahn-Meitner-Institut Berlin (Germany)

Published in SPIE Proceedings Vol. 6892:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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