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Proceedings Paper

Engineering of planar photonic crystal waveguides on silicon-on-insulator for larger guiding bandwidth
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Paper Abstract

Photonic crystal waveguides (PCW) on silicon-on-insulator (SOI) are considered as a promising guiding platform with flexible guiding properties for dense photonics integration. Although SOI is a versatile material for photonics integration, PCWs fabricated on SOI substrates suffer from small guiding bandwidth due to the coupling to leaky TM-like modes. The purpose of this work is to present a systematic approach to increase the low-loss guiding bandwidth of PCWs on SOI. This has been achieved by reducing the interaction of low-group-velocity modes with the surrounding photonic crystal. By this method the low-loss bandwidth of a W1 PCW is increased from 2.5 nm to 12 nm which is the highest reported for this type of waveguide. We also present a detailed analysis of transmission properties of W1 PCWs and elaborate on the coupling to TM-like guided modes present in the low-loss transmission bandwidth of this device.

Paper Details

Date Published: 28 January 2008
PDF: 8 pages
Proc. SPIE 6901, Photonic Crystal Materials and Devices VII, 690117 (28 January 2008); doi: 10.1117/12.778575
Show Author Affiliations
Amir H. Atabaki, Georgia Institute of Technology (United States)
Ehsan Shah Hosseini, Georgia Institute of Technology (United States)
Babak Momeni, Georgia Institute of Technology (United States)
Ali Adibi, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 6901:
Photonic Crystal Materials and Devices VII
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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