Proceedings Paper
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Paper Abstract
We report on ZnO wafer bonded III-nitride light emitting diodes (LEDs). ZnO wafer was selectively etched to form a hexagonal pyramid shape. For enhancing light extraction and heat conductivity, two types of LED structures were demonstrated: one is having patterned GaN at the wafer bonded interface between GaN and ZnO, the other is the LED having no sapphire. The experimental results of electrical and optical characteristics indicate the high potential of these types of LEDs for solid state lighting sources.
Paper Details
Date Published: 15 February 2008
PDF: 9 pages
Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950N (15 February 2008); doi: 10.1117/12.778558
Published in SPIE Proceedings Vol. 6895:
Zinc Oxide Materials and Devices III
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)
PDF: 9 pages
Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950N (15 February 2008); doi: 10.1117/12.778558
Show Author Affiliations
A. Murai, Univ. of California, Santa Barbara (United States)
D. B. Thompson, Univ. of California, Santa Barbara (United States)
U. K. Mishra, Univ. of California, Santa Barbara (United States)
D. B. Thompson, Univ. of California, Santa Barbara (United States)
U. K. Mishra, Univ. of California, Santa Barbara (United States)
S. Nakamura, Univ. of California, Santa Barbara (United States)
S. P. DenBaars, Univ. of California, Santa Barbara (United States)
S. P. DenBaars, Univ. of California, Santa Barbara (United States)
Published in SPIE Proceedings Vol. 6895:
Zinc Oxide Materials and Devices III
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)
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