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Proceedings Paper

A MEMS-based infrared emitter array for combat identification
Author(s): Haisheng San; Xuyuan Chen; Peng Xu; Fangqiang Li; Meiying Cheng
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Paper Abstract

A high-visibility infrared array emitter for identification and display screen has been demonstrated. The silicon-based MEMS Infrared emitter was fabricated on silicon-on-insulator (SOI) wafer. The infrared emitter cell can be operated at 1100K with a total power of 2.5W, and the modulation frequency can reach to 50Hz at 50 modulation depth. The Infrared array emitters consist of 1*2, 2*2 and 3*3 emitter cells, respectively, which can be made as an infrared indicator or display screen for object identification and information displaying with a recognition ranges determined by input power. The experiments shown that due to the problems of structure and stress, the modulation frequency and lifetime of the infrared array emitter were reduced with increasing array dimension.

Paper Details

Date Published: 1 May 2008
PDF: 9 pages
Proc. SPIE 6940, Infrared Technology and Applications XXXIV, 69401T (1 May 2008); doi: 10.1117/12.777259
Show Author Affiliations
Haisheng San, Xiamen Univ. (China)
Xuyuan Chen, Xiamen Univ. (China)
Vestfold Univ. College (Norway)
Peng Xu, Xiamen Univ. (China)
Fangqiang Li, Xiamen Univ. (China)
Meiying Cheng, Xiamen Univ. (China)

Published in SPIE Proceedings Vol. 6940:
Infrared Technology and Applications XXXIV
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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