
Proceedings Paper
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Paper Abstract
There has been a substantial increase in the research and development of optical metrology techniques as applied to
linewidth and overlay metrology for semiconductor manufacturing. Much of this activity has been in advancing
scatterometry applications for metrology. In recent years we have been developing a related technique known as
scatterfield optical microscopy, which combines elements of scatterometry and bright field imaging. In this paper we
present the application of this technique to optical system alignment, calibration, and characterization for the purpose of
accurate normalization of optical data, which can be compared with optical simulations involving only absolute
measurement parameters. We show a series of experimental data from lines prepared using a focus exposure matrix on
silicon and make comparisons between the experimental and theoretical results. The data show agreement on the
nanometer scale using parametric simulation libraries and no "tunable" parameters.
Paper Details
Date Published: 24 March 2008
PDF: 12 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221M (24 March 2008); doi: 10.1117/12.777131
Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)
PDF: 12 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69221M (24 March 2008); doi: 10.1117/12.777131
Show Author Affiliations
R. M. Silver, National Institute of Standards and Technology (United States)
B. M. Barnes, KT Consulting, Inc. (United States)
A. Heckert, National Institute of Standards and Technology (United States)
B. M. Barnes, KT Consulting, Inc. (United States)
A. Heckert, National Institute of Standards and Technology (United States)
Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)
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