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Proceedings Paper

MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy
Author(s): H. Yuji; K. Nakahara; K. Tamura; S. Akasaka; A. Sasaki; T. Tanabe; H. Takasu; T. Onuma; S. F. Chichibu; A. Tsukazaki; A. Ohtomo; M. Kawasaki
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Paper Abstract

Thin films of ZnO and MgxZn1-xO were epitaxially grown on Zn-polar ZnO substrates by plasma assisted molecular beam epitaxy. The miscut of c-plane ZnO substrates toward the [1-100] axis direction leads to a flat substrate surface with straight step edges. The growth mode of epitaxial ZnO films significantly depended on the growth temperature, and a substrate temperature over 800°C was needed for flat film surfaces with monolayer-height steps. Photoluminescence (PL) peak originating from the n = 2 state of A-free excitons was observed at 12 K for the ZnO films grown under stoichiometric and O-rich growth conditions. MgxZn1-xO films were also fabricated under Zn-rich conditions. The film surface exhibited a step-and-terrace structure. The effective PL lifetime of Mg0.08Zn0.92O film was as long as 1.9 ns, which is the highest value ever reported, presumably due to a high purity level of the film.

Paper Details

Date Published: 15 February 2008
PDF: 8 pages
Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950D (15 February 2008); doi: 10.1117/12.774974
Show Author Affiliations
H. Yuji, Rohm Co., Ltd. (Japan)
K. Nakahara, Rohm Co., Ltd. (Japan)
K. Tamura, Rohm Co., Ltd. (Japan)
S. Akasaka, Rohm Co., Ltd. (Japan)
A. Sasaki, Rohm Co., Ltd. (Japan)
T. Tanabe, Rohm Co., Ltd. (Japan)
H. Takasu, Rohm Co., Ltd. (Japan)
T. Onuma, Tohoku Univ. (Japan)
S. F. Chichibu, Tohoku Univ. (Japan)
A. Tsukazaki, Tohoku Univ. (Japan)
A. Ohtomo, Tohoku Univ. (Japan)
M. Kawasaki, Tohoku Univ. (Japan)
CREST, Japan Science and Technology Agency (Japan)

Published in SPIE Proceedings Vol. 6895:
Zinc Oxide Materials and Devices III
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

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