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Proceedings Paper

An analysis of double exposure lithography options
Author(s): Saul Lee; Jeffrey Byers; Kane Jen; Paul Zimmerman; Bryan Rice; Nicholas J. Turro; C. Grant Willson
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Paper Abstract

The current optical photolithography technology is approaching the physical barrier to the minimum achievable feature size. To produce smaller devices, new resolution enhancement technologies must be developed. Double exposure lithography has shown promise as potential pathway that is attractive because it is much cheaper than double patterning lithography and it can be deployed on existing imaging tools. However, this technology is not possible without the development of new materials with nonlinear response to exposure dose. The performance of existing materials such as reversible contrast enhancement layers (rCELs) and theoretical materials such as intermediate state two-photon (ISTP) and optical threshold layer (OTL) materials in double exposure applications was investigated through computer simulation. All three materials yielded process windows in double exposure mode. OTL materials showed the largest process window (DOF 0.137 μm, EL 5.06 %). ISTP materials had the next largest process window (DOF 0.124 μm, EL 3.22 %) followed by the rCEL (0.105 μm, 0.58 %). This study is an analysis of the feasibility of using the materials in double exposure mode.

Paper Details

Date Published: 1 April 2008
PDF: 12 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69242A (1 April 2008); doi: 10.1117/12.773030
Show Author Affiliations
Saul Lee, The Univ. of Texas at Austin (United States)
Jeffrey Byers, SEMATECH (United States)
Kane Jen, The Univ. of Texas at Austin (United States)
Paul Zimmerman, SEMATECH (United States)
Bryan Rice, SEMATECH (United States)
Nicholas J. Turro, Columbia Univ. (United States)
C. Grant Willson, The Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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