
Proceedings Paper
Impact of sampling on uncertainty: semiconductor dimensional metrology applicationsFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
The International Technology Roadmap for Semiconductors (ITRS) provides a set of Metrology specifications as targets
for each technology node. In the current edition (2007) of the ITRS the conventional precision (reproducibility) is
replaced with a new metric - measurement uncertainty for dimensional metrology. This measurement uncertainty
contains single tool precision, tool-to-tool matching, sampling uncertainty, and inaccuracy (sample-to-sample bias
variation and other effects). Clearly, sampling uncertainty is a major component of measurement uncertainty. This paper
elaborates on sampling uncertainty and provides statistical estimates for sampling uncertainty. The authors in this paper
address the importance and the methods of proper sampling. The correct sampling captures and allows for the expression
of the information needed for adequate patterning process control. Along with typical manufacturing process control
cases (excursion control, advanced and statistical process control), several other applications are explored such as optical
and electron beam line width measurement calibration, measurement tool evaluations, lithographic scanner assessment
and optical proximity correction implementation. The authors show how appropriate choices among measurement
techniques, sampling methods, and interpretation of measurement results give meaningful information for process
control and demonstrate how an incorrect choice can lead to wrong conclusions.
Paper Details
Date Published: 16 April 2008
PDF: 22 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220X (16 April 2008); doi: 10.1117/12.772993
Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)
PDF: 22 pages
Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 69220X (16 April 2008); doi: 10.1117/12.772993
Show Author Affiliations
Benjamin Bunday, ISMI, CD Metrology (United States)
Bart Rijpers, ASML, Research and Development, CD Metrology (Netherlands)
Bill Banke, IBM Microelectronics (United States)
Chas Archie, IBM Microelectronics (United States)
Bart Rijpers, ASML, Research and Development, CD Metrology (Netherlands)
Bill Banke, IBM Microelectronics (United States)
Chas Archie, IBM Microelectronics (United States)
Ingrid B. Peterson, Applied Materials, Inc. (United States)
Vladimir Ukraintsev, Veeco Instruments, Inc. (United States)
Thomas Hingst, Qimonda Dresden (Germany)
Masafumi Asano, Toshiba Corp. (Japan)
Vladimir Ukraintsev, Veeco Instruments, Inc. (United States)
Thomas Hingst, Qimonda Dresden (Germany)
Masafumi Asano, Toshiba Corp. (Japan)
Published in SPIE Proceedings Vol. 6922:
Metrology, Inspection, and Process Control for Microlithography XXII
John A. Allgair; Christopher J. Raymond, Editor(s)
© SPIE. Terms of Use
