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Proceedings Paper

An efficient and robust mask model for lithography simulation
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Paper Abstract

We formulate the mask modeling as a parametric model order reduction problem. We then apply a robust reduction technique to generate the compact mask model. Since this model is based on first principle, it naturally includes diffraction, polarization and couplings, important effects that are poorly handled by the modified thin-mask model (MTMM). The model generation involves only a few sampling solves of the governing equation, much fewer than that needed to generate MTMM. Though the model evaluation takes marginally more CPU time than MTMM, the accuracy and the robustness of the new model are based on much more rigorous theoretical foundation.

Paper Details

Date Published: 7 March 2008
PDF: 8 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69243I (7 March 2008); doi: 10.1117/12.772987
Show Author Affiliations
Zhenhai Zhu, Cadence Research Labs. (United States)
Frank Schmidt, Zuse Institute Berlin (Germany)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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