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Proceedings Paper

High-index resist for 193-nm immersion lithography
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Paper Abstract

ArF immersion lithography using water as a fluid medium enables production of 45 nm features. Extending immersion lithography to 32 nm or below requires increases in the refractive indices of the lens material, the immersion fluid, and the resist material. However, a material with a high refractive index generally also has high absorbance. In attempt to design a resist with high refractive index and low absorbance, we studied several types of sulfur-containing polymers and determined which sulfur groups increase the refractive index without increasing the absorbance at 193 nm. We describe new thioester and sulfone structures that enable high index with low absorbance. This chemistry has been exploited to produce polymers with a refractive index of 1.8 at 193 nm and an absorbance less than 1.4 &mgr;m-1. The compatibility of the sulfur functionality with chemically amplified imaging chemistry was demonstrated by printing at 193 nm.

Paper Details

Date Published: 26 March 2008
PDF: 9 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692305 (26 March 2008); doi: 10.1117/12.772958
Show Author Affiliations
Kazuya Matsumoto, Tokyo Institute of Technology (Japan)
Elizabeth Costner, The Univ. of Texas at Austin (United States)
Isao Nishimura, The Univ. of Texas at Austin (United States)
Mitsuru Ueda, Tokyo Institute of Technology (Japan)
C. Grant Willson, The Univ. of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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