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Proceedings Paper

Proximity printing using extreme ultraviolet radiation
Author(s): R. Garg; P. Naulleau; R. Brainard; G. Denbeaux
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Paper Abstract

With the commercialization of extreme ultraviolet (EUV) lithography underway, there is considerable effort underway to improve EUV photoresists, so that they can meet the ITRS 2006 update requirements for resolution, line edge roughness and sensitivity. Nevertheless, the present limited availability of EUV exposure tools, and the high cost of such tools, has hampered the resist development effort. We have developed a simple, low-cost, technique to characterize different photoresist formulations for printing sub-100-nm features using EUV radiation. In the method presented here, a transmission mask is placed in close proximity to the resist sample and the resist is exposed through the mask. The mask used for this technique is a silicon nitride membrane with 50 nm gold layer which is patterned using a focused ion beam tool. The source for EUV light is a xenon based discharge plasma source from Energetiq. After developing, the resist images are measured in a scanning electron microscope to determine the feature size. Here we present results demonstrating sub-100 nm feature size using this method.

Paper Details

Date Published: 21 March 2008
PDF: 6 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213M (21 March 2008); doi: 10.1117/12.772869
Show Author Affiliations
R. Garg, Univ. at Albany (United States)
P. Naulleau, Univ. at Albany (United States)
R. Brainard, Univ. at Albany (United States)
G. Denbeaux, Univ. at Albany (United States)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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