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Proceedings Paper

Rules based process window OPC
Author(s): Sean O'Brien; Robert Soper; Shane Best; Mark Mason
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Paper Abstract

As a preliminary step towards Model-Based Process Window OPC we have analyzed the impact of correcting post-OPC layouts using rules based methods. Image processing on the Brion Tachyon was used to identify sites where the OPC model/recipe failed to generate an acceptable solution. A set of rules for 65nm active and poly were generated by classifying these failure sites. The rules were based upon segment runlengths, figure spaces, and adjacent figure widths. 2.1 million sites for active were corrected in a small chip (comparing the pre and post rules based operations), and 59 million were found at poly. Tachyon analysis of the final reticle layout found weak margin sites distinct from those sites repaired by rules-based corrections. For the active layer more than 75% of the sites corrected by rules would have printed without a defect indicating that most rulesbased cleanups degrade the lithographic pattern. Some sites were missed by the rules based cleanups due to either bugs in the DRC software or gaps in the rules table. In the end dramatic changes to the reticle prevented catastrophic lithography errors, but this method is far too blunt. A more subtle model-based procedure is needed changing only those sites which have unsatisfactory lithographic margin.

Paper Details

Date Published: 4 March 2008
PDF: 9 pages
Proc. SPIE 6925, Design for Manufacturability through Design-Process Integration II, 69251C (4 March 2008); doi: 10.1117/12.772790
Show Author Affiliations
Sean O'Brien, Texas Instruments (United States)
Robert Soper, Texas Instruments (United States)
Shane Best, Texas Instruments (United States)
Mark Mason, Texas Instruments (United States)

Published in SPIE Proceedings Vol. 6925:
Design for Manufacturability through Design-Process Integration II
Vivek K. Singh; Michael L. Rieger, Editor(s)

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