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Proceedings Paper

Rigorous physical modeling of a materials-based frequency doubling lithography process
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Paper Abstract

Double patterning (DP) lithography appears to be a likely patterning technology for 32 nm node manufacturing. Litho-Litho-Etch DP may offer lower cost-of-ownership than Litho-Etch-Litho-Etch DP methods, but uses novel materials and processes that have not been fully characterized. In this work, one LLE approach (negative resist processed over a positive resist image) is studied; the results are used to develop a rigorous physical model that describes the process behavior. Experimental observations suggest that processing during the second lithographic pass influences the resist features produced by the first pass. A prototype simulator has been developed which can model the behavior of the first resist through the entire double patterning process. The model can also predict the response of the second lithographic pass by accounting for the optical and physical-chemical interactions with the first pass features. After validating the simulation predictions with experimental results, a modeling study investigates the interactions between the two passes as a function of alignment error. The study shows that for materials with similar refractive indices (&Dgr;n ⩽ 0.1, &Dgr;k ≈ 0) optical effects are small and interactions between the passes are dominated by the boundary conditions, even if the materials are inert to each other.

Paper Details

Date Published: 4 April 2008
PDF: 11 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69230I (4 April 2008); doi: 10.1117/12.772736
Show Author Affiliations
Stewart A. Robertson, KLA-Tencor (United States)
John J. Biafore, KLA-Tencor (United States)
Trey Graves, KLA-Tencor (United States)
Mark D. Smith, KLA-Tencor (United States)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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