In order to prepare for the next generation technology manufacturing, ASML and TEL are investigating the process manufacturability performance of the CLEAN TRACK^TM LITHIUS Pro^TM-i/ TWINSCAN^TM XT:1900Gi lithocluster at the 45nm node. Previous work from this collaboration showed the feasibility of 45nm processing using the LITHIUS^TM i+/TWINSCAN XT:1700i. ¹ In this work, process performance with regards to critical dimension uniformity and defectivity are investigated to determine the robustness for manufacturing of the litho cluster. Specifically, at the spinner and PEB plate configuration necessary for the high volume manufacturing requirement of 180 wafers per hour, process data is evaluated to confirm the multi-module flows can achieve the required process performance. Additionally, an improvement in the edge cut strategy necessary to maximize the usable wafer surface without negative impact to defectivity is investigated.

Date Published: 4 April 2008
PDF: 12 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231W (4 April 2008); doi: 10.1117/12.772552

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)