Share Email Print

Proceedings Paper

Wafer warp caused by thick film resists acting as a permanent part of the device
Author(s): R. Leuschner; M. Franosch; T. Dow
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Epoxy-novolak thick film resists are of interest for applications where the resist pattern remains in the device serving as mechanical alignment aids, micro channels or protection layers. For these applications, good mechanical properties are of interest. Unfortunately mechanical strength comes with high cross-linking density and, therefore, high tensile stress. We report here on a comparison of three commercially available thick film resists with respect to the following criteria: thickness and uniformity on high topography wafers, i-line photo speed, adhesion on Si3N4, hardness and plasticity, glass transition temperature and wafer warp. The three resists (2 types of SU-8 [MicroChem Corp.] and one type of TMMR [Tokyo Ohka Co., LTD]) show different behavior as a result of the different solvent, photo-acid-generator (PAG) and polymer properties, and trade-offs have to be made depending on the applications.

Paper Details

Date Published: 26 March 2008
PDF: 8 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233N (26 March 2008); doi: 10.1117/12.772530
Show Author Affiliations
R. Leuschner, Infineon Technologies AG (Germany)
M. Franosch, Infineon Technologies AG (Germany)
T. Dow, Infineon Technologies AG (Austria)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?