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Proceedings Paper

Highly reliable detection and correction of pinched areas for high transmission phase shift mask
Author(s): Chih Li Chen; Chun-Cheng Liao; Pin-Jan Chou; Chiang Lin Shih; Steven Shih
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Paper Abstract

HTPSM (High-Transmission Phase Shift Mask) is one of the most promising mask technologies for photolithography resolution enhancement. However, it s well known that the use of HTPSM frequently results in unwanted patterns due to inevitable pinching effects, particularly in spacious areas. Although pinching effect can be effectively suppressed by the application of additional Cr patterns at the problematic locations, it is a critical challenge to systematically detect and automatically correct the complicated patterns in most of realistic cases. We demonstrated remarkable photolithography process window improvement by the use of HTPSM (A type and above) with the focus on the development of a systematic methodology for automatic detection and correction of abnormal patterns due to optical pinching effect. Regular optical rules check (ORC) with specific modifications was employed to precisely locate the potential pinched areas, whereas enhanced design rules check (DRC) was applied subsequently to generate the required additional Cr patterns for final mask fabrication. A variety of photolithography variables, such as wavelength and numerical aperture (NA) were extensively investigated against optical pinching effect to confirm the feasibility and accuracy of the proposed detection/correction methodology for HTPSM application.

Paper Details

Date Published: 7 March 2008
PDF: 7 pages
Proc. SPIE 6924, Optical Microlithography XXI, 692437 (7 March 2008); doi: 10.1117/12.772499
Show Author Affiliations
Chih Li Chen, Nanya Technology Corp. (Taiwan)
Chun-Cheng Liao, Nanya Technology Corp. (Taiwan)
Pin-Jan Chou, Mentor Graphic Corp. (United States)
Chiang Lin Shih, Nanya Technology Corp. (Taiwan)
Steven Shih, Nanya Technology Corp. (Taiwan)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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