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Proceedings Paper

OPC modeling setup with considering flare effect
Author(s): Jong-doo Kim; Jae-young Choi; Jea-hee Kim; Jae-won Han
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Paper Abstract

Flare is unwanted light arriving at the wafer and light causing negative impact on pattern formation. It is caused by scattered light from lens surfaces, problem on lens design, or problem on lens manufacture. The impact of flare varies printed line widths or drops CD uniformity accuracy in full chip. And, It is an added incoherent background intensity that will degrade OPC(Optical Proximity Correction) accuracy[1]. In this paper, we discussed CD variation, MEEF (Mask Error Enhancement Factor) and OPC accuracy by the flare effects. Flare is bound up with local pattern density. Local pattern density influences background intensity by flare or stray light. So we studied CD variation, MEEF, OPC modeling data with local pattern density by several experiment. Also, in this study, we will discuss test pattern drawing for OPC modeling data, analyze CD difference between OPC test pattern with considering flare effect and test pattern with regardless flare effect and MEEF value by flare effect. MEEF is main factor that influences lithography process margin. This paper will show test pattern optimization in OPC modeling.

Paper Details

Date Published: 7 March 2008
PDF: 8 pages
Proc. SPIE 6924, Optical Microlithography XXI, 692442 (7 March 2008); doi: 10.1117/12.772454
Show Author Affiliations
Jong-doo Kim, Dongbu HiTek (South Korea)
Jae-young Choi, Dongbu HiTek (South Korea)
Jea-hee Kim, Dongbu HiTek (South Korea)
Jae-won Han, Dongbu HiTek (South Korea)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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