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Proceedings Paper

Optimization of BARC process for hyper-NA immersion lithography
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Paper Abstract

The extension of current 193nm immersion lithography technology is depending on increasing the numerical aperture (NA). High-resolution imaging requires the decrease of photoresist thickness to compensate for smaller depth of focus (DOF) and prevent pattern collapse. Poor etch selectivity between photoresist and BARC reads to the use of thinner BARC with faster etch-rate. Also, controlling reflectance over a wider range of incident angles for hyper-NA above 1.0 gives more challenge for thin BARC. To reduce substrate reflectivity, various material strategies (dual-layer BARC such as organic/inorganic BARC or organic/organic BARC, Si-based ARC/spin-on carbon (SOC), and so on) have been introduced through many papers. Organic dual-layer BARC is capable of suppressing reflectivity through wide range of incident angles. But, the inevitable increase of its thickness is not a desirable direction due to the decreasing trend of photoresist thickness. When amorphous carbon (a-C) is used as a hardmask for sub-stack, the combination of organic/inorganic BARC (i.e. SiON) is currently well known process. Si-ARC/SOC may be the promising candidates of hardmask because Si component of Si-ARC affords a high etch selectivity to photoresist and its combination with SOC decreases reflectance. The optical constants of above organic materials can be tuned to control the substrate reflectivity for hyper-NA.

Paper Details

Date Published: 26 March 2008
PDF: 9 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69232R (26 March 2008); doi: 10.1117/12.771957
Show Author Affiliations
Kilyoung Lee, Hynix Semiconductor Inc. (South Korea)
Junghyung Lee, Hynix Semiconductor Inc. (South Korea)
Sungkoo Lee, Hynix Semiconductor Inc. (South Korea)
Dongheok Park, Hynix Semiconductor Inc. (South Korea)
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Seungchan Moon, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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