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Proceedings Paper

E-beam direct write alignment strategies for the next generation node
Author(s): H. Alves; P. Hahmann; K.-H. Kliem; U. Weidenmueller; S. Jahr; C. G. Frase; D. Gnieser; H. Bosse; R. Zimmermann; C. Arndt
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Paper Abstract
New types of alignment marks to be applied in electron beam direct write (EBDW) have been studied theoretically and experimentally. The dependence of signal contrast and signal form on such mark properties like step height, mark pitch and stack material has been investigated in detail using Monte Carlo simulations. The different alignment marks were etched in Si to different depths and the respective alignment repeatability was determined with a Vistec SB3050 DW lithography tool. Finally, for the most promising mark, test exposures were performed and the overlay determined.
Paper Details
Date Published: 26 March 2008
PDF: 12 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210I (26 March 2008); doi: 10.1117/12.771585
Show Author Affiliations
H. Alves, Vistec Electron Beam GmbH (Germany)
P. Hahmann, Vistec Electron Beam GmbH (Germany)
K.-H. Kliem, Vistec Electron Beam GmbH (Germany)
U. Weidenmueller, Vistec Electron Beam GmbH (Germany)
S. Jahr, Vistec Electron Beam GmbH (Germany)
C. G. Frase, Physikalisch-Technische Bundesanstalt (Germany)
D. Gnieser, Physikalisch-Technische Bundesanstalt (Germany)
H. Bosse, Physikalisch-Technische Bundesanstalt (Germany)
R. Zimmermann, Qimonda Dresden GmbH & Co. OHG (Germany)
C. Arndt, Qimonda Dresden GmbH & Co. OHG (Germany)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)
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