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Proceedings Paper

PDL oxide enabled pitch doubling
Author(s): Nader Shamma; Wen-Ben Chou; Ilia Kalinovski; Don Schlosser; Tom Mountsier; Collin Mui; Raihan Tarafdar; Bart van Schravendijk
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Paper Abstract

A double patterning (DP) process is introduced with application for advanced technology nodes. This DP technique is enabled by a novel low-temperature pulsed deposition layer (PDLTM) oxide film which is deposited directly on patterned photoresist. In this article, we will report the results of fabrication of sub-50nm features on a 100nm pitch by the PDL-spacer DP process using 0.85 NA dry ArF lithography. This result represents the potential of the PDL-based DP to significantly enhance the resolution of the patterning process beyond the limits of optical lithography. Components of CD variance for this spacer DP scheme will be discussed.

Paper Details

Date Published: 12 March 2008
PDF: 10 pages
Proc. SPIE 6924, Optical Microlithography XXI, 69240D (12 March 2008); doi: 10.1117/12.771514
Show Author Affiliations
Nader Shamma, Novellus Systems, Inc. (United States)
Wen-Ben Chou, Lam Research Corp. (United States)
Ilia Kalinovski, Novellus Systems, Inc. (United States)
Don Schlosser, Novellus Systems, Inc. (United States)
Tom Mountsier, Novellus Systems, Inc. (United States)
Collin Mui, Novellus Systems, Inc. (United States)
Raihan Tarafdar, Novellus Systems, Inc. (United States)
Bart van Schravendijk, Novellus Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 6924:
Optical Microlithography XXI
Harry J. Levinson; Mircea V. Dusa, Editor(s)

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