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Proceedings Paper

Canon's development status of EUVL technologies
Author(s): Shigeyuki Uzawa; Hiroyoshi Kubo; Yoshinori Miwa; Toshihiko Tsuji; Hideki Morishima; Kazuhiko Kajiyama; Takayuki Hasegawa
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Paper Abstract

We developed a small field exposure tool (SFET) in collaboration with EUVA (Extreme Ultraviolet Lithography System Development Association). SFET was installed at SELETE (Semiconductor Leading Edge Technologies; Japanese Consortium) in 2006. SFET is positioned as a cornerstone of the manufacturing technologies for EUVL Full- Field tools as well as tool for resist and mask development. We started the system design of the Full-Field tool and fabrication of the six-mirror projection optics based on the experience of the SFET. In this paper, we introduce the outline of Canon's activities for the full-field tool. EUVL is requested to resolve the sub 30 nm features. The studies of the resolution for higher NA EUV projection optics is also presented.

Paper Details

Date Published: 26 March 2008
PDF: 8 pages
Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69210N (26 March 2008); doi: 10.1117/12.769894
Show Author Affiliations
Shigeyuki Uzawa, Canon Inc. (Japan)
Hiroyoshi Kubo, Canon Inc. (Japan)
Yoshinori Miwa, Canon Inc. (Japan)
Toshihiko Tsuji, Canon Inc. (Japan)
Hideki Morishima, Canon Inc. (Japan)
Kazuhiko Kajiyama, Canon Inc. (Japan)
Takayuki Hasegawa, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 6921:
Emerging Lithographic Technologies XII
Frank M. Schellenberg, Editor(s)

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