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Proceedings Paper

Post-lithography characterization of ArF resists for 45 nm node implant layers and beyond
Author(s): A. Pikon; G. Pohlers; S. Derrough; F. Milesi; J. Foucher
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Paper Abstract

Resolution and accuracy needs for the most advanced nodes, as well as fab capacities management are requirements that encourage the use of ArF resists for post-gate implant levels. In this paper, we investigate several key integration criteria that an ArF resist needs to fulfill to be used for implant applications. Outgassing level is followed during the first seconds of the implantation step and is systematically found under the chamber pressure limit. As well, stopping power efficiency is evaluated. SIMS analysis and simulation tests with SRIM software are performed to define the minimum resist thickness that prevents ions to penetrate the layers underneath. Data indicate that both experimental and simulation tests are in good agreement and that at low energies the stopping layer thickness is found to be in the order or lower than 80 nm. Finally, the impact of implantation step on patterned wafers is carried out. Features of interest are dense and isolated lines with a nominal CD of 130 nm. We control the CD and profile with a standard CD SEM and a CD AFM in order to get access to additional information such as height of the feature, top rounding and the CD through height. Results underline that our patterned resist doesn't show significant degradation under our implant conditions.

Paper Details

Date Published: 26 March 2008
PDF: 10 pages
Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231D (26 March 2008); doi: 10.1117/12.769466
Show Author Affiliations
A. Pikon, Rohm and Haas Electronics Materials (France)
G. Pohlers, Rohm and Haas Electronics Materials (United States)
S. Derrough, CEA/LETI/MINATEC (France)
F. Milesi, CEA/LETI/MINATEC (France)
J. Foucher, CEA/LETI/MINATEC (France)

Published in SPIE Proceedings Vol. 6923:
Advances in Resist Materials and Processing Technology XXV
Clifford L. Henderson, Editor(s)

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