LEDs based on semiconductor nanowires are a promising alternative to the standard planar devices to achieve low cost high yield manufacturing for the general lighting applications. The expected advantages of such structures are a high crystalline quality of the heterostructures, compliance with a large range of substrates and light extraction enhancement. We report here on the present status of our research work concerning the electromagnetic simulation of nanowire emission, the epitaxy of near-UV semiconductor vertically aligned nanowires, the collective integration technology of these nanowires and their characterizations.

Date Published: 2 October 2007
PDF: 9 pages
Proc. SPIE 6797, Manufacturing LEDs for Lighting and Displays, 67970P (2 October 2007); doi: 10.1117/12.768615

Published in SPIE Proceedings Vol. 6797:
Manufacturing LEDs for Lighting and Displays
Thomas P. Pearsall, Editor(s)