The samples were prepared from CdZnTe substrate with thickness of 600µm, on wich thin CdHgTe (KRT) thin films with thicknesses of 16µm, 18.75 µm and the same sample with KRT thin film with thickness 21.6µm was coated by diamond thin film with thickness of 30nm. B ion implantation into KRT film on CdZnTe substrate was made with purpose of investigation of volt-ampere characteristics and defects formation. Ion doping of B in KRT with doses of (D=3.4 mCl/cm2, D=6.8 mCl/cm2) and energies (50 keV, 100 keV, 150 keV). The calculations by SRIM-TRIM 2003 software for condition of maximum ion distribution on the interface "filmsubstrate" have shown that the optimal energy is 100 keV for all mentioned samples. The results also have shown that implantation at ions energy 100 keV is optimal for form diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe.

Date Published: 22 February 2008
PDF: 12 pages
Proc. SPIE 6890, Optical Components and Materials V, 68900O (22 February 2008); doi: 10.1117/12.768610

Published in SPIE Proceedings Vol. 6890:
Optical Components and Materials V
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)