Share Email Print

Proceedings Paper

Tunable ring resonators for silicon Raman laser and amplifier applications
Author(s): J. K. Doylend; O. Cohen; M. R. Lee; O. Raday; S. Xu; V. Sih; H. Rong; M. Paniccia
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Recently, low threshold Raman silicon lasers based on ring resonator architecture have been demonstrated. One of the key elements of the laser cavity is the directional coupler that couples both pump and signal light in and out of the ring resonator from the bus waveguide. The coupling coefficients are crucial for achieving desired laser performance. In this paper, we report design, fabrication, and characterization of tunable silicon ring resonators for Raman laser and amplifier applications. By employing a tunable coupler, the coupling coefficients for both pump and signal wavelength can be tailored to their optimal values after the fabrication, which significantly increases the processing tolerance and improves the device performance.

Paper Details

Date Published: 12 February 2008
PDF: 9 pages
Proc. SPIE 6896, Integrated Optics: Devices, Materials, and Technologies XII, 68960Q (12 February 2008); doi: 10.1117/12.767867
Show Author Affiliations
J. K. Doylend, Intel Corp. (United States)
O. Cohen, Intel Corp. (Israel)
M. R. Lee, Intel Corp. (United States)
O. Raday, Intel Corp. (Israel)
S. Xu, Intel Corp. (United States)
V. Sih, Intel Corp. (United States)
H. Rong, Intel Corp. (United States)
M. Paniccia, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 6896:
Integrated Optics: Devices, Materials, and Technologies XII
Christoph M. Greiner; Christoph A. Waechter, Editor(s)

© SPIE. Terms of Use
Back to Top