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Proceedings Paper

Characterization of AlInGaN-based 405nm distributed feedback laser diodes
Author(s): S. Masui; K. Tsukayama; T. Yanamoto; T. Kozaki; S. Nagahama; T. Mukai
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Paper Abstract

The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the low dislocation freestanding GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating whose period was 80 nm was formed into an n-type cladding layer. The fine tooth shape grating was obtained by the EB lithography and the dry etching. No additional threading dislocation could be found at the regrowth interface. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under continuous wave operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 °C to 85 °C at an output power of 30 mW. The lifetime was estimated to be 4000 h by the lifetime test which was carried out under the condition of a constant output power of 30mW at 25 °C for 1000 h. The single longitudinal mode emission was maintained for the life tested DFB laser diodes.

Paper Details

Date Published: 29 January 2008
PDF: 8 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090G (29 January 2008); doi: 10.1117/12.767731
Show Author Affiliations
S. Masui, Nichia Corp. (Japan)
K. Tsukayama, Nichia Corp. (Japan)
T. Yanamoto, Nichia Corp. (Japan)
T. Kozaki, Nichia Corp. (Japan)
S. Nagahama, Nichia Corp. (Japan)
T. Mukai, Nichia Corp. (Japan)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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