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Proceedings Paper

Interband cascade laser progress
Author(s): W. W. Bewley; C. L. Canedy; M. Kim; C. S. Kim; J. A. Nolde; D. C. Larrabee; J. R. Lindle; I. Vurgaftman; J. R. Meyer
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Paper Abstract

Recent advances in the development of mid-IR antimonide type-II "W" interband cascade lasers have led to a considerably improved high-temperature operation of the devices. We report an experimental investigation of four interband cascade lasers with wavelengths spanning the mid-infrared spectral range, i.e., 2.9-5.2 μm near room temperature in pulsed mode. One broad-area device had a pulsed threshold current density of only 3.8 A/cm at 78 K (λ = 3.6 μm) and 590 A/cm2 at 300 K (λ = 4.1 μm). The room-temperature threshold for the shortest-wavelength device (λ = 2.6-2.9 μm) was even lower, 450 A/cm2. A cavity-length study of the lasers emitting at 3.6-4.1 μm yielded an internal loss varying from 7.8 cm-1 at 78 K to 24 cm-1 at 300 K, accompanied by a decrease of the internal efficiency from 77% to 45%. Preliminary cw testing led to a narrow-ridge device from one of the wafers with emission at λ = 4.1 μm operating to 288 K, a new record for interband devices in this wavelength range.

Paper Details

Date Published: 29 January 2008
PDF: 10 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090X (29 January 2008); doi: 10.1117/12.766908
Show Author Affiliations
W. W. Bewley, Naval Research Lab. (United States)
C. L. Canedy, Naval Research Lab. (United States)
M. Kim, Naval Research Lab. (United States)
C. S. Kim, Naval Research Lab. (United States)
J. A. Nolde, Naval Research Lab. (United States)
D. C. Larrabee, Naval Research Lab. (United States)
J. R. Lindle, Naval Research Lab. (United States)
I. Vurgaftman, Naval Research Lab. (United States)
J. R. Meyer, Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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