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A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy(HVPE)
Author(s): Doo Soo Kim; Ho Jun Lee; Yong Jin Kim; Su Kim Jung; Dong Kun Lee; Bo Young Lee
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Paper Abstract

The thick GaN layers were grown on GaN/Si(111) templates by hydride vapor phase epitaxy (HVPE). The GaN templates were grown by metal organic chemical vapor deposition (MOCVD), and there were remained some cracks on their layers. The silicon (Si) substrates were not treated any patterning process. The size of template was 2inch Si(111) wafer and these templates were directly used for HVPE growth. For the growth of the thick GaN layer, the gas injection system of HVPE was modified for improving its growth rate. The proper growth temperature and V/III ratio gave us a transparent thick GaN layer and its thickness has been over than 100um for 2 hours. After the growth, the Si substrate was etched by Si etching solution. We obtained a transparent thick GaN layer and its size was 1/4 inch as the biggest size and it was bended. Structural and optical properties of thick GaN layer were characterized by high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) measurements.

Paper Details

Date Published: 28 February 2008
PDF: 9 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689406 (28 February 2008); doi: 10.1117/12.765705
Show Author Affiliations
Doo Soo Kim, LG Siltron (South Korea)
Ho Jun Lee, LG Siltron (South Korea)
Yong Jin Kim, LG Siltron (South Korea)
Su Kim Jung, Advanced Photonics Research Institute (South Korea)
Dong Kun Lee, LG Siltron (South Korea)
Bo Young Lee, LG Siltron (South Korea)

Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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