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Proceedings Paper

On chip surge protection for GaN-power LEDs by ZnO thin film varistor
Author(s): Liann-Be Chang; Yuan-Hsiao Chang; Yuan-Shun Chang; Ming-Jer Jeng
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Paper Abstract

High ESD endurance capability is an important issue for the extensive application of power light emitting diodes (LEDs). Conventional ceramic varistor based on sintered bulk zinc oxide (ZnO) with various metal oxides as additives have widely used in surge protection device by grounding the excessive current for a long time. Those sintered bulk ZnO devices are known to exhibit high nonlinearity coefficient (α>50) and good reliability for many commercial applications. However, sintering manufacture method limits the practicability of integrating bulk ZnO varistor with other semiconductor devices. In this research, we report on the thin-film ZnO produced by sputtering system and post-heat treatment which have shown good varistor characteristics. The nonlinear coefficients (α) in the correspondent current -voltage (I-V) curve can up to 50 at a high electric field of 1.1 kV/cm, and, with efficiently resolving thermal generated by high injected current, this thin film varistor can conduct current to the density as high as 20A/cm2 successfully. In addition, our thin film varistor devices combined with power LEDs by gold wires bonding revealed an improved electrostatic discharge (ESD) ability of up to 400V apparently. This wire bonding configuration will be modified to a flip-chip LED with the ZnO/Si submount in the future. Sputtering and annealing are two commonly used processes in general semiconductor manufacture procedures which are adopted in our ZnO thin film deposition. Therefore, our proposed method have provided a new possible solution to integrate not only LEDs but also other semiconductor devices with thin film varistor owning surge protection capability, especially to accomplish an on-chip surge protection.

Paper Details

Date Published: 15 February 2008
PDF: 8 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 689412 (15 February 2008); doi: 10.1117/12.764748
Show Author Affiliations
Liann-Be Chang, Chang-Gung Univ. (Taiwan)
Yuan-Hsiao Chang, Chang-Gung Univ. (Taiwan)
Yuan-Shun Chang, Chang-Gung Univ. (Taiwan)
Ming-Jer Jeng, Chang-Gung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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