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Proceedings Paper

Passive cooling effects of low and high fill-factor 937 nm 1 cm arrays
Author(s): John Hostetler; Ching-Long Jiang; Robert Roff; Viorel Negoita; Stephan Strohmaier; Christoph Tillkorn; Radosveta Radionova; Carl Miester; Thilo Vethake; Ulrich Bonna; Martin Huonker; Christian Schmitz; Friedhelm Dorsch
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Paper Abstract

Diode-pumped solid-state lasers are gaining acceptance as the desired laser source for materials processing as well as a host of new applications that are expanding rapidly. Because of this, the performance, stability and lifetime of the diode-pump source face unprecedented scrutiny. Increasing the lifetime of the diode, while increasing power, remains a primary focus of the industry. One lifetime limiting issue is that of a voltage potential in the water cooling channels which can cause cooler degradation and lower efficiency over time. Studies have been carried out that explore different cooling approaches based on passive schemes where insulation layers are present to shield the voltage from the water channels. However, with the introduction of insulation layers, a reduction of the deployable power from that of microchannel coolers is seen. This report explores the effects of passive cooling approaches on the power and divergence of 1 cm AuSn/CuW mounted bars with fill factors ranging from 10% to 50%. It is shown that a 150 W array can be realized on a passive cooler and multiplexed to give a 1600 W stack. Thermal modeling is presented along with life-test data for passively cooled devices.

Paper Details

Date Published: 25 February 2008
PDF: 10 pages
Proc. SPIE 6876, High-Power Diode Laser Technology and Applications VI, 68760A (25 February 2008); doi: 10.1117/12.763443
Show Author Affiliations
John Hostetler, TRUMPF Photonics Inc. (United States)
Ching-Long Jiang, TRUMPF Photonics Inc. (United States)
Robert Roff, TRUMPF Photonics Inc. (United States)
Viorel Negoita, TRUMPF Photonics Inc. (United States)
Stephan Strohmaier, TRUMPF Laser GmbH and Co. KG (Germany)
Christoph Tillkorn, TRUMPF Laser GmbH and Co. KG (Germany)
Radosveta Radionova, TRUMPF Photonics Inc. (United States)
Carl Miester, TRUMPF Photonics Inc. (United States)
Thilo Vethake, TRUMPF Photonics Inc. (United States)
Ulrich Bonna, TRUMPF Photonics Inc. (United States)
Martin Huonker, TRUMPF Laser GmbH and Co. KG (Germany)
Christian Schmitz, TRUMPF Laser GmbH and Co. KG (Germany)
Friedhelm Dorsch, TRUMPF Photonics Inc. (United States)

Published in SPIE Proceedings Vol. 6876:
High-Power Diode Laser Technology and Applications VI
Mark S. Zediker, Editor(s)

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