Share Email Print

Proceedings Paper

Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics
Author(s): B. Q. Cao; M. Lorenz; H. von Wenckstern; C. Czekalla; M. Brandt; J. Lenzner; G. Benndorf; G. Biehne; M. Grundmann
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Phosphorous-doped ZnO (ZnO:P) nanowires were prepared by a high-pressure pulsed laser deposition process. To extend the size range of available wires, μm-thick ZnO:P microwires were grown additionally by a direct carbothermal deposition process. Low-temperature cathodoluminescence of single ZnO:P nanowires grown by both processes exhibit characteristic phosphorus acceptor-related peaks: neutral acceptor-bound exciton emission ((A0, X), 3.356 eV), free-electron to neutral-acceptor emission ((e, A0), 3.314 eV), and donor-to-acceptor pair emission (DAP, ~3.24 and ~3.04 eV). This proves that stable phosphorus acceptor levels have been induced into the ZnO:P nano- and microwires. From the quantitative evaluation of the spectroscopic features we deduct an acceptor binding energy of 122 meV. The ZnO:P microwires were used as channels in bottom-gate field effect transistors (FET) built on Si substrates with SiO2 gate oxide. The electrical FET-characteristics of several wires show reproducibly clear qualitative indication for p-type conductivity for variation of gate voltage. This behavior is opposite to that of nominally undoped, n-type conducting wires investigated for comparison. The p-type conductivity was found to be stable over more than six months.

Paper Details

Date Published: 15 February 2008
PDF: 12 pages
Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950V (15 February 2008); doi: 10.1117/12.763435
Show Author Affiliations
B. Q. Cao, Univ. Leipzig (Germany)
M. Lorenz, Univ. Leipzig (Germany)
H. von Wenckstern, Univ. Leipzig (Germany)
C. Czekalla, Univ. Leipzig (Germany)
M. Brandt, Univ. Leipzig (Germany)
J. Lenzner, Univ. Leipzig (Germany)
G. Benndorf, Univ. Leipzig (Germany)
G. Biehne, Univ. Leipzig (Germany)
M. Grundmann, Univ. Leipzig (Germany)

Published in SPIE Proceedings Vol. 6895:
Zinc Oxide Materials and Devices III
Ferechteh Hosseini Teherani; Cole W. Litton, Editor(s)

© SPIE. Terms of Use
Back to Top