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Proceedings Paper

Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm
Author(s): N. Michel; M. Calligaro; M. Lecomte; O. Parillaud; M. Krakowski; J. M. G. Garcia-Tijero; H. Odriozola; I. Esquivias
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Paper Abstract

We have realized an asymmetric laser structure at 975 nm, based on an Al-free active region. The quantum wells are located near the p-cladding, so that most of the waveguide is n-type, which allows for reduced optical losses and series resistance. On uncoated broad-area lasers, we have obtained very low optical losses of 0.4 cm-1, together with a high internal quantum efficiency of close to 100%. Based on this structure, we have realized index-guided tapered lasers delivering 1.3W CW, with a narrow far-field angle of 2.5° (FWHM) and 5.8° (at 1/e2) in the slow axis, and a good beam propagation ratio M2 = 1.6. The lasers reach a high maximum wall-plug efficiency of 56%. These tapered lasers deliver a maximum power of 1.5W CW with M2 < 3. The results on the asymmetric structure are compared with those of a symmetric laser structure.

Paper Details

Date Published: 1 February 2008
PDF: 9 pages
Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090R (1 February 2008);
Show Author Affiliations
N. Michel, Alcatel-Thales III-V Lab. (France)
M. Calligaro, Alcatel-Thales III-V Lab. (France)
M. Lecomte, Alcatel-Thales III-V Lab. (France)
O. Parillaud, Alcatel-Thales III-V Lab. (France)
M. Krakowski, Alcatel-Thales III-V Lab. (France)
J. M. G. Garcia-Tijero, Univ. Politécnica de Madrid (Spain)
H. Odriozola, Univ. Politécnica de Madrid (Spain)
I. Esquivias, Univ. Politécnica de Madrid (Spain)

Published in SPIE Proceedings Vol. 6909:
Novel In-Plane Semiconductor Lasers VII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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