
Proceedings Paper
Abnormal PL spectrum in InGaN MQW surface emitting cavityFormat | Member Price | Non-Member Price |
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Paper Abstract
We report the observation of an abnormal photoluminescent (PL) spectrum from a HeCd laser pumped InGaN multiple
quantum well (MQW) vertical cavity. The device is fabricated using standard MOCVD deposition on a (0001)-oriented
sapphire substrate. The layer structures are: 10nm nucleation layer, a 4um bulk GaN layer, InGaN MQWs, and a final
200nm GaN cap layer. The InGaN MQWs consist of 10 pairs of 5 nm GaN barrier and 3 nm In0.1Ga0.9N well. The peak
emission of the as-grown MQWs sample was ~420nm. A dielectric distributed Bragg reflectors (DBR) were then coated
on the top layer, followed by a laser lift off from sapphire substrate, and subsequently another DBR coated on the bulk
GaN bottom surface. The cavity has a quality factor of ~520 from 400-490nm. The device was pumped by a focused CW
HeCd laser from the bulk GaN side. When the laser is focused onto the InGaN MQWs, a photoluminescent spectrum
centered at the designed MQW wavelength was observed as expected. However, when the focused position was moved
toward the bulk GaN region, an additional abnormal PL peak around 460nm was observed. This is far outside the
designed MQW wavelength.
Paper Details
Date Published: 29 January 2008
PDF: 5 pages
Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080L (29 January 2008); doi: 10.1117/12.762869
Published in SPIE Proceedings Vol. 6908:
Vertical-Cavity Surface-Emitting Lasers XII
Chun Lei; James K. Guenter, Editor(s)
PDF: 5 pages
Proc. SPIE 6908, Vertical-Cavity Surface-Emitting Lasers XII, 69080L (29 January 2008); doi: 10.1117/12.762869
Show Author Affiliations
J. T. Chu, National Chiao Tung Univ. (Taiwan)
Y.-J. Cheng, Academia Sinica (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
Y.-J. Cheng, Academia Sinica (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
Published in SPIE Proceedings Vol. 6908:
Vertical-Cavity Surface-Emitting Lasers XII
Chun Lei; James K. Guenter, Editor(s)
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