Share Email Print

Proceedings Paper

Optical properties of beta-FeSi2 on Si (100) inclined substrate
Author(s): Hiroyasu Takada; Shin-ichiro Uekusa
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

β-FeSi2 has been attracting a great deal of attention because of its compatibility with Si-based light-emitting diodes (LEDs). It has also been reported that Β-FeSi2 thin film undergoes a direct transition with a band gap of about 0.85 eV. However, some authors have reported that β-FeSi2 has an indirect band gap structure on the basis of several first principles calculations. This difference is thought to be induced by the stress of the β-FeSi2 interface acting on Si by lattice mismatch, which affects the band structure of the β-FeSi2 thin film. To investigate the effect, we evaluated the optical properties of β-FeSi2 grown on lattice matched Si (001) substrate 8°off toward the <110> direction. All samples were formed by depositing Fe on the Si substrate to grow β-FeSi2 thin film by electron beam deposition. From Raman measurements, it was observed that the samples prepared on inclined substrate shifted to higher wave numbers. From the optical absorption measurement, we observed that the band structure was changed by the Si off substrate. Additionally, the PL intensity at about 0.8 eV for the samples grown on the Si off substrate was increased.

Paper Details

Date Published: 13 February 2008
PDF: 8 pages
Proc. SPIE 6898, Silicon Photonics III, 68981G (13 February 2008); doi: 10.1117/12.762793
Show Author Affiliations
Hiroyasu Takada, Meiji Univ. (Japan)
Shin-ichiro Uekusa, Meiji Univ. (Japan)

Published in SPIE Proceedings Vol. 6898:
Silicon Photonics III
Joel A. Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?