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Proceedings Paper

Photoluminescence and Raman characterization from Er-implanted InxGa1-xAs bulk crystal
Author(s): Tomoyuki Arai; Shin-ichiro Uekusa
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Paper Abstract

InxGa1-xAs bulk crystal is a lattice-matched substrate material for InGaAs-based laser diodes. We prepared an InxGa1-xAs with compositional fractions x ranging from 0 to 0.2 and the effect of Er impurity on the photoluminescence (PL) and Raman characterization of an Er-implanted InxGa1-xAs bulk crystal was studied. From the results of PL and Raman spectroscopy, it was found that the implantation damage in InxGa1-xAs:Er sample is recovered at a temperature of 700°C by the thermal annealing. Maximum PL intensity of Er-related emission was obtained for the InxGa1-xAs:Er sample annealed at 700°C in the compositional fractions ranging from 0 to 0.2.

Paper Details

Date Published: 5 February 2008
PDF: 8 pages
Proc. SPIE 6890, Optical Components and Materials V, 689015 (5 February 2008); doi: 10.1117/12.762682
Show Author Affiliations
Tomoyuki Arai, Meiji Univ. (Japan)
Shin-ichiro Uekusa, Meiji Univ. (Japan)

Published in SPIE Proceedings Vol. 6890:
Optical Components and Materials V
Michel J. F. Digonnet; Shibin Jiang; John W. Glesener; J. Christopher Dries, Editor(s)

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