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Proceedings Paper

Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection
Author(s): Brandon S. Passmore; Jiang Wu; Eric A. DeCuir Jr.; Omar Manasreh; P. M. Lytvyn; Euclydes Marega Jr.; Vasyl P. Kunets; Gregory J. Salamo
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Paper Abstract

Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular beam epitaxy and characterized using atomic force microscopy and photoluminescence. Devices were fabricated from the multiple quantum dot structures in order to measure the normal incident photoresponse at 77 and 300 K. In addition, the dark current was measured in the temperature range of 77 - 300 K for the devices. A dual broadband photoresponse from the interband and intersubband transitions was measured to be 0.5 to 1.0 μm and 2.0 to 14.0 μm, respectively.

Paper Details

Date Published: 1 February 2008
PDF: 8 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000O (1 February 2008); doi: 10.1117/12.762338
Show Author Affiliations
Brandon S. Passmore, Univ. of Arkansas (United States)
Jiang Wu, Univ. of Arkansas (United States)
Eric A. DeCuir Jr., Univ. of Arkansas (United States)
Omar Manasreh, Univ. of Arkansas (United States)
P. M. Lytvyn, V. Lashkaryov Institute of Semiconductor Physics (United States)
Euclydes Marega Jr., Univ. of Arkansas (United States)
Vasyl P. Kunets, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

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