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Proceedings Paper

Study of Ag-In solder as low temperature wafer bonding intermediate layer
Author(s): Riko I Made; Chee Lip Gan; Chengkuo Lee; Li Ling Yan; Aibin Yu; Seung Wook Yoon; John H. Lau
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Paper Abstract

Indium-silver as solder materials for low temperature bonding had been introduced earlier. In theory the final bonding interface composition is determined by the overall materials composition. Wafer bonding based multiple intermediate layers facilitates precise control of the formed alloy composition and the joint thickness. Thus the bonding temperature and post-bonding re-melting temperature could be easily designed by controlling the multilayer materials. In this paper, a more fundamental study of In-Ag solder materials is carried out in chip-to-chip level by using flip-chip based thermocompression bonding. Bonding at 180°C for various time duration under various bonding pressure is studied. Approaches of forming Ag2In with re-melting temperature higher than 400°C at the bonding interface are proposed and discussed. Knowledge learned in this process technology can support us to develop sophisticated wafer level packaging process based wafer bonding for applications of MEMS and IC packages.

Paper Details

Date Published: 20 February 2008
PDF: 9 pages
Proc. SPIE 6884, Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VII, 68840H (20 February 2008); doi: 10.1117/12.762046
Show Author Affiliations
Riko I Made, Nanyang Technological Univ. (Singapore)
Chee Lip Gan, Nanyang Technological Univ. (Singapore)
Chengkuo Lee, Institute of Microelectronics (Singapore)
National Univ. of Singapore (Singapore)
Li Ling Yan, Institute of Microelectronics (Singapore)
Aibin Yu, Institute of Microelectronics (Singapore)
Seung Wook Yoon, Institute of Microelectronics (Singapore)
John H. Lau, Institute of Microelectronics (Singapore)

Published in SPIE Proceedings Vol. 6884:
Reliability, Packaging, Testing, and Characterization of MEMS/MOEMS VII
Allyson L. Hartzell; Rajeshuni Ramesham, Editor(s)

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