
Proceedings Paper
Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contactsFormat | Member Price | Non-Member Price |
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Paper Abstract
We fabricate and experimentally characterize metal-semiconductor-metal (MSM) photodetectors with CNT film
Schottky electrodes on n-type and p-type silicon substrates. We extract a Schottky barrier height of ~0.45 eV and ~0.51
eV for CNT films on n-type and p-type Si respectively. The extracted barrier height corresponds to a CNT film
workfunction of 4.5-4.7 eV, which is within the range of the previously reported workfunction values for individual
CNTs. Furthermore, we find that while at temperatures above 240°K thermionic emission is the dominant transport
mechanism, at lower temperatures tunneling begins to dominate. We also characterize the photoresponse of the CNT
film-Si MSM photodetector by illuminating the samples with a 633 nm HeNe laser. We observe that while the
photocurrent of the CNT film MSM devices is similar to that of the Ti/Au control samples at high biases, their lower
dark current results in a higher photo-to-dark current ratio relative to the control devices. We explain these observations
by comparing the two interfaces. This work opens up the possibility of integrating CNT films as transparent and
conductive Schottky electrodes in conventional semiconductor electronic and optoelectronic devices.
Paper Details
Date Published: 20 February 2008
PDF: 8 pages
Proc. SPIE 6885, MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface, 68850A (20 February 2008); doi: 10.1117/12.761935
Published in SPIE Proceedings Vol. 6885:
MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface
Srinivas A. Tadigadapa; Babak A. Parviz; Albert K. Henning, Editor(s)
PDF: 8 pages
Proc. SPIE 6885, MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface, 68850A (20 February 2008); doi: 10.1117/12.761935
Show Author Affiliations
Ashkan Behnam, Univ. of Florida (United States)
Jason L. Johnson, Univ. of Florida (United States)
Yongho Choi, Univ. of Florida (United States)
M. Günhan Ertosun, Stanford Univ. (United States)
Zhuangchun Wu, Univ. of Florida (United States)
Jason L. Johnson, Univ. of Florida (United States)
Yongho Choi, Univ. of Florida (United States)
M. Günhan Ertosun, Stanford Univ. (United States)
Zhuangchun Wu, Univ. of Florida (United States)
Andrew G. Rinzler, Univ. of Florida (United States)
Pawan Kapur, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)
Ant Ural, Univ. of Florida (United States)
Pawan Kapur, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)
Ant Ural, Univ. of Florida (United States)
Published in SPIE Proceedings Vol. 6885:
MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface
Srinivas A. Tadigadapa; Babak A. Parviz; Albert K. Henning, Editor(s)
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