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Proceedings Paper

Semiconductor laser frequency-stabilization: influence of multi-position temperature controls
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Paper Abstract

The precise interferometric systems employed in today's artificial satellites require semiconductor lasers of the highest callibur. But, one particularly large obstacle has stood in the way of their broad application; the stabilization of their oscillation frequencies. While a number of different approaches have been tested, none have provided overall, long-term stability. Most recently, we used a Doppler-free absorption line of Rb atoms with a precision temperature controller and an improved laser mount; in this instance, relative optical frequency stability rated 9.07×10-13 ≤ σ(2,τ) ≤ 7.54×10-10, in averaging time for 0.01s ≤ τ ≤ 23s. Furthermore, we heated the Rb cell to up to 313K, in order to enhance the control signal and improve oscillation frequency stability.

Paper Details

Date Published: 22 February 2008
PDF: 7 pages
Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 688917 (22 February 2008); doi: 10.1117/12.761595
Show Author Affiliations
M. Yanagisawa, Niigata Univ. (Japan)
K. Nakano, Niigata Univ. (Japan)
S. Maehara, Niigata Univ. (Japan)
T. Sato, Niigata Univ. (Japan)
M. Ohkawa, Niigata Univ. (Japan)
T. Maruyama, Niigata Univ. (Japan)
S. Kawamura, National Astronomical Observatory (Japan)

Published in SPIE Proceedings Vol. 6889:
Physics and Simulation of Optoelectronic Devices XVI
Marek Osinski; Fritz Henneberger; Keiichi Edamatsu, Editor(s)

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