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Proceedings Paper

Temperature dependence of PL spectrum in researching InGaAs/GaAs single quantum well
Author(s): Wei Fan; Xiaoxuan Xu; Xiufeng Sun
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Paper Abstract

The nondestructive photoluminescence technology has been introduced to test and evaluate the growth of InGaAs/GaAs Single-Quantum Well (SQW) by using Molecular Beam Epitaxy (MBE) technology. The experiments are carried out at different temperature in order to test the effect of variation of gap energy. When temperature varied, the lineshape of spectra changed, particular in the short wavelength part. The wavelength of emit light peak blue shift as well. We indicate that the main mechanism of the radiative recombination at high temperature is of band-to-band origin. However, at low temperature, exciton recombination is prevailing.

Paper Details

Date Published: 8 January 2008
PDF: 4 pages
Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68380S (8 January 2008); doi: 10.1117/12.761077
Show Author Affiliations
Wei Fan, Nankai Univ. (China)
Xiaoxuan Xu, Nankai Univ. (China)
Xiufeng Sun, Nankai Univ. (China)

Published in SPIE Proceedings Vol. 6838:
Optoelectronic Devices and Integration II
Xuping Zhang; Hai Ming; Maggie Yihong Chen, Editor(s)

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