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Proceedings Paper

Ultrafast piezospectroscopy in semiconductor nanostructures
Author(s): A. V. Akimov; A. V. Scherbakov; T. Berstermann; D. R. Yakovlev; P. J. S. van Capel; J. I. Dijkhuis; M. Bayer
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Paper Abstract

We use the internal picosecond strain pulses to control the electron energy in a semiconductor quantum well. For generating the strain pulse a 100 nm thick metal transducer was hit by intense laser pulse and a strain pulse with duration ~10 ps and amplitude up to 0.1% was injected into a GaAs substrate. This strain pulse travels strongly directed through the crystal towards the quantum well generating at each momentary position a "nano-earthquake". When the quantum well is hit by this "earth quake", the exciton resonance is shifted on a value up to 10 meV on a ps time scale.

Paper Details

Date Published: 7 February 2008
PDF: 7 pages
Proc. SPIE 6892, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII, 689205 (7 February 2008); doi: 10.1117/12.760268
Show Author Affiliations
A. V. Akimov, A.F. Ioffe Physico-Technical Institute (Russia)
A. V. Scherbakov, A.F. Ioffe Physico-Technical Institute (Russia)
T. Berstermann, Univ. of Dortmund (Germany)
D. R. Yakovlev, A.F. Ioffe Physico-Technical Institute (Russia)
Univ. of Dortmund (Germany)
P. J. S. van Capel, Utrecht Univ. (Netherlands)
J. I. Dijkhuis, Utrecht Univ. (Netherlands)
M. Bayer, Univ. of Dortmund (Germany)

Published in SPIE Proceedings Vol. 6892:
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XII
Jin-Joo Song; Kong-Thon Tsen; Markus Betz; Abdulhakem Y. Elezzabi, Editor(s)

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