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Proceedings Paper

Etching lithium niobate during Ti diffusion process
Author(s): V. Sivan; L. Bui; D. Venkatachalam; S. Bhargava; T. Priest; A. Holland; A. Mitchell
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Paper Abstract

We present a novel method of etching lithium niobate during the Ti diffusion process. A hypothesis for this etching process is explained by defining the kinetics of the Ti diffusion process as an electrochemical reaction. The Ti ions diffuse into the X cut LiNbO3 crystal by swapping with Nb ions generating an electric field. Investigations were carried out by placing a bare LiNbO3 wafer on top of the Ti patterned LiNbO3 substrate during the diffusion process in a wet oxygen atmosphere. The built-in electric field during the Ti diffusion process is neutralised with the bare LiNbO3 placed on top and is evident from the material removal that takes place from the top bare substrate and deposited on the bottom substrate were Ti is diffused. Hence the bare substrate is etched in the regions where Ti is present on the bottom substrate. Features can be arbitrarily defined (using Ti etching) and can have dimensions of 1 micron or smaller. Etch depths of the order of 1 micron have been demonstrated while maintaining smooth surfaces. The crystalline nature of the etched surface is analysed using X-ray diffraction techniques. The refractive index measurement and the surface roughness of the etched surface are also presented.

Paper Details

Date Published: 9 January 2008
PDF: 8 pages
Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68001J (9 January 2008); doi: 10.1117/12.759612
Show Author Affiliations
V. Sivan, RMIT Univ. (Australia)
L. Bui, RMIT Univ. (Australia)
D. Venkatachalam, RMIT Univ. (Australia)
S. Bhargava, RMIT Univ. (Australia)
T. Priest, Defence Science and Technology Organisation (Australia)
A. Holland, RMIT Univ. (Australia)
A. Mitchell, RMIT Univ. (Australia)

Published in SPIE Proceedings Vol. 6800:
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Hark Hoe Tan; Jung-Chih Chiao; Lorenzo Faraone; Chennupati Jagadish; Jim Williams; Alan R. Wilson, Editor(s)

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