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Proceedings Paper

The design and simulation of same Si-based device used as both LED and PD
Author(s): Xiaoyun Li; Wei Wang; Pingjuan Niu; Weilian Guo; Hongwei Liu; Guanghua Yang; Xin Yu
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Paper Abstract

A kind of new light emitting diode (LED) based on Si p-n junction forward injection mechanism completely compatible with standard Si-CMOS technology is designed and analyzed, which has higher efficiency than LED based on Si pn junction in reverse bias breakdown mode. At same time according to reversibility of optoelectronic conversion, the same Si-LED can be used as a photodetector (PD). The photoelectric characteristics of this device as both LED and PD are simulated by the commercial software SILVACO. This device is expected to have wide application in next generation optoelectronic integrated circuit (OEIC).

Paper Details

Date Published: 8 January 2008
PDF: 9 pages
Proc. SPIE 6838, Optoelectronic Devices and Integration II, 683826 (8 January 2008); doi: 10.1117/12.759565
Show Author Affiliations
Xiaoyun Li, Tianjin Polytechnic Univ. (China)
Wei Wang, Tianjin Polytechnic Univ. (China)
Pingjuan Niu, Tianjin Polytechnic Univ. (China)
Weilian Guo, Tianjin Polytechnic Univ. (China)
Tianjin Univ. (China)
Hongwei Liu, Tianjin Polytechnic Univ. (China)
Guanghua Yang, Tianjin Polytechnic Univ. (China)
Xin Yu, Tianjin Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 6838:
Optoelectronic Devices and Integration II
Xuping Zhang; Hai Ming; Maggie Yihong Chen, Editor(s)

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